ISSCC 2004 / SESSION 6 / IMAGING / 6 . 7 6 . 7 . A CMOS Single Photon Avalanche Diode Array for 3 D Imaging
نویسندگان
چکیده
Time-of-flight (TOF) measurements using pulsed light beams for 3D imaging or profiling require either a costly mechanical device to scan the scene [1] or a short and highly energetic optical pulse to flood the scene with photons [2]. An alternative to these methods is the use of detector arrays based on single photon avalanche diodes (SPADs) operating in Geiger mode [3]. These devices accurately detect the arrival of a single photon and are therefore effective in computing TOF of extremely small bursts of optical power even when the source is uncollimated and diffused over a wide cone of light. Thus, SPAD arrays are indicated for 3D imaging of volumes of several cubic meters at sub-millimetric axial resolutions. This approach becomes attractive with the recent integration of SPAD arrays in standard CMOS technology [3].
منابع مشابه
Neural Imaging Using Single-Photon Avalanche Diodes
Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...
متن کاملA CMOS Single-Photon Avalanche Diode Sensor for Fluorescence Lifetime Imaging
This contribute describes the design and preliminary characterization of a 16x16-pixel array based on Single Photon Avalanche Diodes (SPADs), fabricated in a standard high-voltage 0.35μm CMOS technology, and aimed at the analysis of fluorescence phenomena. Each pixel integrates a SPAD combined with an active quenching circuit and a voltage comparator for the digital conversion of the avalanche ...
متن کاملElectrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode
This work presents a dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) technology. The evaluated structure can collect the photons impinging beneath the pixel guard ring, as well as the pixel active area. The fill factor of the SPAD increases from 12.5% to 42% in comparison with simi...
متن کاملArrays of Single Photon Avalanche Diodes in CMOS Technology: Picosecond Timing Resolution for Range Imaging (INVITED)
A solid-state imager fabricated in CMOS technology is presented for depth information capture of arbitrary 3D objects with millimeter resolution. The system is based on an array of 32x32 pixels that independently measure the time-of-flight of a ray of light as it is reflected back from the objects in a scene. A single cone of pulsed laser light illuminates the scene, thus no complex mechanical ...
متن کاملVideo-rate fluorescence lifetime imaging camera with CMOS single-photon avalanche diode arrays and high-speed imaging algorithm.
A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 μm complementary metal-oxide-semiconductor single-photon avalanche diode (SPAD) plus time-to-digital conv...
متن کامل